savantic semiconductor product specification silicon npn power transistors 2SD1441 d escription with to-3pn package built-in damper diode high voltage ,high reliability high speed switching wide area of safe operation applications for horizontal deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 4 a i cm collector current-peak 15 a i bm base current-peak 3.5 a p c collector power dissipation t c =25 70 w t j junction temperature 130 t stg storage temperature -55~130 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1441 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =500ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =3a; i b =1a 1.0 v v besat base-emitter saturation voltage i c =3a; i b =1a 1.5 v i cbo collector cut-off current v cb =750v; i e =0 50 a i cbo collector cut-off current v cb =1500v; i e =0 1 ma h fe dc current gain i c =3a ; v ce =10v 5 15 t s storage time 4 9 s t f fall time i c =3a i bend =1a,l leak =5h 0.8 s v f diode forward voltage i f =-4a,i b =0 2.2 v
savantic semiconductor product specification 3 silicon npn power transistors 2SD1441 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
|
